Morphological | Electrophysiological | ||
---|---|---|---|
Active | Passive | ||
Layer 2 neurons | Field span in L1 (μm) Total length apical Dendrites (μm) Number of apical branches |
ISI-1 ISI-3 Increase in firing frequency per 100 pA |
RMP (mV) Voltage sag (%) Input resistance (MΩ) Time constant (ms) Rheobase (pA) |
Layer 3 neurons | Field span in L1 (μm) Number of apical branches |
ISI-2 ISI-3 Increase in firing frequency per 100 pA |
RMP (mV) Voltage sag (%) Time constant (ms) Rheobase (pA) |
Layer 5 neurons | Field span in L1 (μm) Field span apical dendrite (μm) Total length basal Dendrites (μm) Number of apical branches Number of basal branches |
ISI-3 | RMP (mV) Voltage sag (%) Input resistance (MΩ) Time constant (ms) Rheobase (pA) |
Layer 6 neurons | Field span basal dendrites (μm) Total length apical Dendrites (μm) Total length basal Dendrites (μm) Vertical span apical Dendrite (ending layer) |
- | RMP (mV) Voltage sag (%) Input resistance (MΩ) Time constant (ms) Rheobase (pA) |
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Note: RMP, resting membrane potential; rheobase, minimal current to elicit an action potential.